Explosive Growth in China Drives RF Power Semiconductor Device Sales for Wireless Infrastructure to over US$1 Billion in 2014

Oyster Bay, New York - 18 May 2015

​After a successful 2013, the RF Power Semiconductors for Wireless Infrastructure market blew off the chart in 2014, according to ABI Research. The Asia-Pacific region, and China specifically, continues to be the main driver for the RF power semiconductor devices that are sold into the mobile wireless infrastructure segment.

“LTE and TD-LTE air interfaces will be the technology engines of growth for the next 5 years,” comments Lance Wilson, Research Director. “Although, Gallium Nitride (GaN) devices had meaningful share the 2014 story was all about Silicon LDMOS which continues to dominate this segment by a large margin.” The increasing and critical need for wireless data remains an important driver for the overall market for RF power semiconductor devices.

ABI Research’s report RF Power Semiconductor Devices for Mobile and Wireless Infrastructure examines evolving design parameters and materials, price versus performance, and the interdependent relationship of RF power semiconductors to RF Power Amplifiers. In depth quantitative forecasts are presented through 2020 in a separate market data report under the same name.

These findings are part of ABI Research’s High-Power RF Active Devices Market Research.

ABI Research provides technology market research and technology intelligence for industry innovators. From offices in North America, Europe and Asia, ABI Research’s worldwide team of experts advises thousands of decision makers through 70+ research and advisory services. Est. 1990. For more information visit www.abiresearch.com, or call +1.516.624.2500.

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