Explosive Growth in China Drives RF Power Semiconductor Device Sales for Wireless Infrastructure Grew to over US$1 Billion in 2014

Oyster Bay, New York - 24 Aug 2015

Just when the industry thought that things were pretty good in 2013, RF Power Semiconductors for Wireless Infrastructure blew off the charts in 2014. China and the Asia-Pacific region in general continues to be the main driver for the RF Power Semiconductor devices that are sold into the mobile wireless infrastructure segment. According to ABI Research’s Research Director Lance Wilson, “Again, for the foreseeable future the Asia-Pacific region, especially China, will dominate this market and remain the most important region and focus for high-power RF devices for wireless infrastructure.”

LTE and TD-LTE air interfaces will be the technology engines of growth for the next 5 years. Although GaN (Gallium Nitride) devices had meaningful share, 2014 was all about Silicon LDMOS which continues to dominate this segment by a large margin. The increasing and critical need for wireless data remains an important driver for the overall market for RF power semiconductor devices.

RF Power Semiconductor Devices for Mobile and Wireless Infrastructure, an ABI Research report, examines evolving design parameters and materials, price versus performance and the interdependent relationship of RF power semiconductors to RF Power Amplifiers. In depth quantitative forecasts are also presented through 2020.

It is included the firm’s High-Power RF Active Devices Market Research.

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