GaN RF Power Semiconductor Devices Continue to Gain Share

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By Lance Wilson | 3Q 2020 | IN-5906


The GaN/Si-LDMOS FET Competitive Picture


The Gallium Nitride (GaN) versus Silicon Laterally Diffused Metal Oxide Semiconductor (Si-LDMOS) competitive story is not a new one, but over the last year or so GaN has become much more competitive. When looked at from a $/Watt standpoint, Si-LDMOS Radio Frequency (RF) power devices have become somewhat asymptotic and any profound price reductions are difficult to see for the future. GaN, on the other hand, has been descending to around US$0.20 to US$0.25/watt. While this range is still higher than that of Si-LDMOS, the difference is now close enough that GaN is starting to gain share.

Simplistically, this assumes technical performance parity, but in some cases there are incremental improvements in performance for GaN primarily associated with linearity, efficiency, and high-voltage operation. Si-LDMOS also has an upper frequency limit of about 4 Ghz, while GaN is useable well up into the millimeter wave region (>20 Ghz).You must be a subscriber to view this ABI Insight.
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