Microwave and Millimeter Wave Vacuum Electron Devices

Price: Starting at USD 4,500
Publish Date: 20 Feb 2020
Code: AN-5090
Research Type: Research Report
Microwave and Millimeter Wave Vacuum Electron Devices
Actionable Benefits

Actionable Benefits

  • Will aid in resource planning and investment strategies for these segments.
  • Provides a forward-looking evaluation of defense electronics spending and positioning to aid market participation.
  • Useful for an analysis of the health of the end industries and markets (defense, air/sea navigation, medical and industrial).
Critical Questions Answered

Critical Questions Answered

  • Who uses these devices?
  • Who are the major manufacturers?
  • How long will this market continue?
  • How big is this business?
  • Will there be new market entrants?
  • Why have RF power semiconductors been slow to penetrate the high-power microwave and millimeter wave VED marketplace?
  • Will Gallium Nitride devices start to erode the VED dominance of high-power microwave and millimeter wave amplifiers?
Research Highlights

Research Highlights

  • A detailed descriptive breakdown of the five major sub-segments of this market (TWT, Klystron, Magnetron, Crossed-Field Amplifier and Gyrotron).
  • How the 5-year forecast affects defense, avionics, medical and industrial relationships.
  • The competitive positioning of GaN semiconductors versus VEDs.
Who Should Read This?

Who Should Read This?

  • Defense electronics companies.
  • Energy and scientific research organizations.
  • Spacecraft and spacecraft electronics manufacturers.
  • Vacuum electron device manufacturers.
  • RF power semiconductor users.
  • RF power semiconductor manufacturers.
  • Governmental agencies.

Table of Contents

1. EXECUTIVE SUMMARY

1.1. The Increasing Threat from Gallium Nitride Semiconductor Devices
1.2. Business Segment Discussion

2. TECHNOLOGY IMPLICATIONS

2.1. Microwave and Millimeter Wave High-Power VEDs

3. MARKET ASSESSMENT

3.1. The Present Market Environment
3.2. The Vendor Picture
3.3. Sub-Segment Discussion