Oyster Bay, New York - 31 Jul 2019
Just when the industry thought that things were pretty good for 4G/LTE Wireless RF Power Semiconductors, devices for 5G NR low- and mid-band took off as the overall market grew to US$1 billion in 2018. The market will continue to climb nearly US$2 billion by 2024, according to global tech market advisory firm, ABI Research.
China and the Asia-Pacific region, in general, continues to be the main driver for the RF power semiconductor devices sold into the mobile wireless infrastructure segment. “Once again, for the foreseeable future, the Asia-Pacific region, especially China, will dominate this market and remain the most important region and focus for high power RF semiconductor devices for wireless infrastructure,” says Lance Wilson, Research Director at ABI Research.
The 4G/LTE air interface will continue to be a technology engine of revenue for the next five years, but the industry is now seeing major shipments of Si LDMOS for 5G. Although, GaN (Gallium Nitride) devices had meaningful share, the 2018 story was still about Silicon LDMOS, which continues to dominate this segment by a large margin.
“The increasing and critical need for wireless data remains an important driver for the overall market for RF power semiconductor devices,” Wilson concludes.
These findings are from ABI Research’s RF Power Semiconductor Devices for Mobile Wireless Infrastructure market data report. This report is part of the company’s 5G & Mobile Network Infrastructure research service, which includes research, data, and analyst insights. Market Data spreadsheets are composed of deep data, market share analysis, and highly segmented, service-specific forecasts to provide detailed insight where opportunities lie.
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