RF Power Semiconductors: Silicon, Gallium Nitride, and Gallium Arsenide High-Power RF Devices
A myriad of products and services utilize RF power amplifiers in their transmitter circuitry: wireless infrastructure for cell phones and other mobile devices; radio and television broadcasting; medical equipment such as MRI machines; materials curing that includes carpet fibers and plywood; radar; space and satellite communications; police and fire radios; and military communications and electronics of all kinds. Most of these transmitters use semiconductors in the RF power amplifier output stages. Even modern, extremely high-power broadcast transmitters that traditionally have used large vacuum tubes in their RF sections have finally begun to use solid-state devices.
This study examines RF power semiconductor devices that have power outputs of greater than three watts and operate at frequencies of up to 4 GHz, which represent the bulk of applications in use today. Both silicon-based and gallium based devices are covered.
This application note is a companion narrative to the market data report MD-RFPS-18.
Table of Contents
1. EXECUTIVE SUMMARY
1.1. RF Power Semiconductor Devices
1.2. Technology Summary
1.3. Business Segment Discussion
2. RF POWER SEMICONDUCTOR DEVICE TECHNOLOGY IMPLICATIONS
2.1. Introduction to RF Power Semiconductor Devices