Chinese GSM Rollouts and Global Migration to LTE will Keep RF Power Amplifier and Device Markets Buoyant
Oyster Bay, New York - 26 Oct 2011
Accelerated Chinese wireless
infrastructure rollouts and the worldwide demand for wireless data have
benefited the base station RF power amplifier and RF power device
markets.
The Asia-Pacific region, including Japan, presently
accounts for more than 75% of the RF power semiconductor devices sold
into the mobile wireless infrastructure segment. “Recent Chinese
multi-carrier GSM deployments have been massive and have buoyed RF power
vendors tremendously,” says Lance Wilson, research director, mobile
networks.
The demand is expected to strengthen the market until
at least 2012 and Chinese GSM deployment activity will only begin to
slow in 2013.
A happy coincidence for equipment vendors, 2012 is
the expected time frame for LTE deployments in developed countries to
gather a head of steam. “Although LTE has not yet significantly impacted
RF power amplifier and device sales, it will bolster RF power sales in
the wireless infrastructure space from about 2011 onward,” says Aditya
Kaul, practice director, mobile networks.
The growing demand for
wireless data is also driving the overall market upwards for both RF
power amplifiers and RF power devices.
ABI Research’s new report, “RF Power Amplifiers,”
examines evolving design parameters and materials, price versus
performance, and the interdependent relationship of RF power
semiconductors to RF power amplifiers. Quantitative forecasts are
presented through 2016 for both segments.
It is included in two of the firm’s research services: Radio Access Networks and RF Power Devices.
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