X-band pulsed systems comprise one of the earliest modern radar evolutions. Dating back to World War ll, early pulsed radars extensively used magnetron vacuum electron devices to develop the extremely high peak powers needed for effective radar operation.
There are now two principal types of X-band pulsed RF power devices. One dates back to the earliest days of radar while the other is a modern semiconductor solution.
This report looks at both of these technologies, gallium nitride semiconductors and microwave vacuum electron devices, to understand what is driving the market dynamics for this segment. Detailed technical descriptions are presented and a discussion of the business cases for each individual market and a combined market is presented.
Vendors for both technologies are described and ranked for revenue market share and there is additional market data for each technology as well. A brief forecast for RF power devices at X-band is presented for both gallium nitride and vacuum electron devices.
This report should be of interest to anyone studying the microwave RF power device market and will include vendors, systems houses, radar manufacturers and government agencies.