Gallium Nitride RF Power Grabs Some Wireless Infrastucture Business

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1Q 2014 | IN-1018354

 

GaN Benefits from Evolving Base Station Hardware Platforms

NEWS


2013 was the first year that gallium nitride RF power devices made a meaningful impact on the RF power amplifier market for wireless infrastructure. In previous years GaN had only a minimal effect on the overall market. The primary driver for this emergence from the periphery of the RF power semiconductor segment has been driven by GaN’s march down the $/Watt curve and the changing topology for macro base stations.

Wireless Infrastructure’s Changing Hardware

IMPACT


The last several years have seen the classic macro base station undergo a substantive transformation. Originally, high power base stations were in six foot racks in an air conditioned shelter. Macro base stations now are more distributive in nature with the baseband and networ...

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