RF Power Semiconductors Take Center Stage at the 2008 IEEE International Microwave Symposium

The 2008 IEEE International Microwave Symposium had a substantial number of papers and booth space dedicated to RF power. This included RF power amplifier active devices, RF power amplifiers, and peripheral components. Although a scientific accounting was not done, about 25% of the papers revolved around the topic of RF power. This year’s conference witnessed an extension of both power and frequency as far as solid-state devices are concerned. There were advances made in all technologies, but GaN (Gallium Nitride) was the technology showing the most movement. Progress has been made along all GaN fronts with operating voltages now at the 65 VDC level and operating frequencies now nearing 20 GHz. Power output capability also showed movement with the 200-watt CW barrier being breached and pulsed operation close to 500 W.

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