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 RF Power Semiconductor Devices
A Highly Segmented Market-Based Analysis of the Silicon, Gallium Nitride, Gallium Arsenide and Silicon Carbide High Power RF Device Technologies A myriad services utilize RF power amplifiers in their transmitter circuitry: wireless infrastructure for cell phones and other mobile devices; radio and television broadcasting; medical equipment such as MRI machines; materials curing that includes carpet fibers and plywood; radar; space and satellite communications; police and fire radios; and military communications and electronics of all kinds. Most of these transmitters use semiconductors in the RF power amplifier output stages. Even modern, extremely high power broadcast transmitters that traditionally have used large vacuum tubes in their RF sections, have finally given way to solid-state devices. This report examines RF Power Semiconductor Devices that have power outputs of greater than 5 watts and at frequencies of up to 3.8 GHz, which represent the bulk of applications in use today.  What Does This Report Answer?
Section 1.
EXECUTIVE SUMMARY 1.1 RF Power: The Lynchpin for Wireless 1.2 A Historical Perspective: The Signposts Aren’t Always Clear 1.3 Technology Drivers 1.3.1 Silicon (Si) 1.3.2 Gallium Arsenide (GaAs) 1.3.3 Gallium Nitride (GaN) 1.3.4 Silicon Carbide (SiC) 1.3.5 RF Power Semiconductor Device Packaging 1.4 The RF Power Semiconductor Device Market and Forecasts 1.4.1 Market Segments 1.4.2 Forecast Implications Section 2. RF POWER SEMICONDUCTOR DEVICE 2.1 Introduction to RF Power Semiconductor Devices 2.1.1 Device Technologies 2.1.1.1 Silicon Bipolar and Silicon FETs 2.1.1.2 SiC Devices 2.1.1.3 GaAs Devices 2.1.1.4 GaN Devices 2.1.2 RF Power Device Packaging 2.1.2.1 BeO and AlN Packaging 2.1.2.2 Plastic Packaging 2.1.2.3 Modern Compound-Metal Packaging Section 3. THE RF POWER SEMICONDUCTOR DEVICE MARKETPLACE 3.1 Market Overview 3.1.1 Wireless Infrastructure 3.1.2 Military 3.1.3 Industrial/Medical/Scientific (ISM) 3.1.4 Broadcast 3.1.5 Commercial Avionics 3.1.6 Non-Cellular Communications 3.2 RF Power Semiconductor Device Forecast Summary 3.2.1 Forecast Summary for All Segments 3.2.2 Forecast Summary without Wireless Infrastructure 3.3 RF Power Semiconductor Device Market Share Evaluations 3.3.1 RF Power Semiconductor Device Market Share by Vendor 3.3.2 RF Power Semiconductor Device Market Share by Segment 3.3.3 RF Power Semiconductor Device Market Share by Technology 3.3.4 Market Prognosis Section 4. COMPANY PROFILES: RF POWER DEVICE VENDORS AND SELECTED USERS 4.1 Andrew Corporation 4.1.1 Andrew Corporation Profile 4.1.2 Andrew Corporation Analysis 4.2 Beam Power Technology, Inc. 4.2.1 Beam Power Technology, Inc. Profile 4.2.2 Beam Power Technology, Inc. Analysis 4.3 Ciclon Semiconductor Device Corp. 4.3.1 Ciclon Semiconductor Device Corp. Profile 4.3.2 Ciclon Semiconductor Device Corp. Analysis 4.4 Cree Semiconductor 4.4.1 Cree Semiconductor Profile 4.4.2 Cree Semiconductor Analysis 4.5 Ericsson 4.5.1 Ericsson Profile 4.5.2 Ericsson Analysis 4.6 Eudyna Devices 4.6.1 Eudyna Devices Profile 4.6.2 Eudyna Devices Analysis 4.7 Filtronic PLC 4.7.1 Filtronic PLC Profile 4.7.2 Filtronic PLC Analysis 4.8 Freescale Semiconductor 4.8.1 Freescale Semiconductor Profile 4.8.2 Freescale Semiconductor Analysis 4.9 Harris Corporation 4.9.1 Harris Corporation Profile 4.9.2 Harris Corporation Analysis 4.10 HVVi Semiconductors, Inc. 4.10.1 HVVi Semiconductors, Inc. Profile 4.10.2 HVVi Semiconductors, Inc. Analysis 4.11 Infineon Technologies 4.11.1 Infineon Technologies Profile 4.11.2 Infineon Technologies Analysis 4.12 Integra Technologies 4.12.1 Integra Technologies Profile 4.12.2 Integra Technologies Analysis 4.13 M-A/COM RF & Microwave 4.13.1 M-A/COM RF & Microwave Profile 4.13.2 M-A/COM RF & Microwave Analysis 4.14 Microsemi Corporation 4.14.1 Microsemi Corporation Profile 4.14.2 Microsemi Corporation Analysis 4.15 Mitsubishi Electric 4.15.1 Mitsubishi Electric Profile 4.15.2 Mitsubishi Electric Analysis 4.16 Nitronex Corporation 4.16.1 Nitronex Corporation Profile 4.16.2 Nitronex Corporation Analysis 4.17 Nujira Ltd. 4.17.1 Nujira Ltd. Profile 4.17.2 Nujira Ltd. Analysis 4.18 NXP Semiconductors 4.18.1 NXP Semiconductors Profile 4.18.2 NXP Semiconductors Analysis 4.19 Powerwave Technologies 4.19.1 Powerwave Technologies Profile 4.19.2 Powerwave Technologies Analysis 4.20 PulseWave RF 4.20.1 PulseWave RF Profile 4.20.2 PulseWave RF Analysis 4.21 RFMD 4.21.1 RFMD Profile 4.21.2 RFMD Analysis 4.22 Rockwell Collins 4.22.1 Rockwell Collins Profile 4.22.2 Rockwell Collins Analysis 4.23 Semelab PLC 4.23.1 Semelab PLC Profile 4.23.2 Semelab PLC Analysis 4.24 STMicroelectronics 4.24.1 STMicroelectronics Profile 4.24.2 STMicroelectronics Analysis 4.25 Toshiba 4.25.1 Toshiba Profile 4.25.2 Toshiba Analysis 4.26 TriQuint Semiconductor 4.26.1 TriQuint Profile 4.26.2 Triquint Analysis Section 5. COMPANY LIST Section 6. ACRONYMS TECHNOLOGY IMPLICATIONS TABLE OF CONTENTS SCOPE OF STUDY SOURCES AND METHODOLOGY NOTES Tables
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